forward voltage reverse current c a p a c i t a n c e radiant intensity peak emission wavelength spectral bandwidth 50% half angle - 1- e l3 0 2 infrared emitting diodes(gaas) k o d e n s h i the EL302 a high-power gaas ired mounted in a clear sidelooking package, is compact, low profile, and easy to mount. f e a t u r e s |u c o m p a c t |ulow profile package |u l o w - c o s t |usidelooking plastic package a p p l i c a t i o n s |u p h o t o i n t e r r u p t e r s |uoptical switches |u t o y s d i m e n s i o n s (unit : mm) r a t i n gs y m b o li t e m maximum ratings reverse voltage forward current pulse forward current * 1 power dissipation operating temp. storage temp. soldering temp. * 2 v r i f i f p p d t o p r . t s t g . t s o l . 5 5 0 0 . 5 7 5 - 2 5 ~ + 8 5 - 3 0 ~ + 1 0 0 2 4 0 v m a a m w ? ? ? u n i t ( t a = 2 5 ?) ( t a = 2 5 ?) electro-optical characteristics i f = 5 0 m a v r = 5 v f = 1 m h z i f = 5 0 m a i f = 5 0 m a i f = 5 0 m a i t e m t y p . 2 5 0 . 7 9 4 0 5 0 ?? 3 0 v f i r c t p o ?p ?? ?a 1 . 6 1 0 v a p f m w / s r n m n m d e g . s y m b o l c o n d i t i o n s m i n . m a x . u n i t . *1. pulse width otw z100 sec.period o t = 1 0 m s e c . *2. for max.5 seconds at the position of 2 mm from the package EL302
- 2- e l3 0 2 infrared emitting diodes(gaas) power dissipation vs. ambient temperature radiant intensity vs. forward current relative radiant intensity vs. ambient temperature relative intensity vs. wavelength forward current vs. forward voltage radiant pattern relative radiant intensity vs. distance
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